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PRD1011 - 10,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 10,000A +/- 5% Wet Thermal Oxide
$ 700.00 700.0 USD
Sale
PRD1010 - 20,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 20,000A +/- 5% Wet Thermal Oxide
$ 750.00 750.0 USD
Sale
PRD1009 - 80,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 80,000A +/- 5% Wet Thermal Oxide
$ 4,306.25 4306.25 USD
Sale
PRD1008 - 40,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 40,000A +/- 5% Wet Thermal Oxide
$ 950.00 950.0 USD
Sale
PRD1500 - 2000A Stoichiometric LPCVD Nitride on 150mm Wafer
Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 2000A +/- 5% Stoichiometric LPCVD Nitride
$ 1,050.00 1050.0 USD
Sale
PRD1007 - 6000A Low Stress LPCVD Nitride on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 10-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 6000A +/- 5% Low Stress LPCVD Nitride
$ 1,525.00 1525.0 USD
Sale
PRD1005 - 3000A Wet Thermal Oxide on 100mm Wafers
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: .003 - .005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Wet Thermal Oxide
$ 775.00 775.0 USD
Sale
PRD1006 - 3000A Dry Chlorinated Thermal Oxide with Forming Gas Anneal on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: .003 - .005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Dry Chlorinated Thermal Oxide with Forming Gas Anneal
$ 1,275.00 1275.0 USD
Sale
PRD1003 - 3000A Dry Thermal Oxide on 100mm Wafers
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1- 30 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Dry Thermal Oxide
$ 950.00 950.0 USD
Sale
PRD1001 - 1000A Wet Thermal Oxide on 100mm wafers
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1 - 20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 1000A +/- 5% Wet Thermal Oxide
$ 700.00 700.0 USD
Sale
PRD1000 - 1000A Wet Thermal Oxide on 100mm Wafers

Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 0.003-0.005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 1000A +/- 5% Wet Thermal Oxide
**1 Lot = 25 wafers
$ 775.00 775.0 USD