Sale
PRD1000 - 1000A Wet Thermal Oxide on 100mm Wafers

Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 0.003-0.005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 1000A +/- 5% Wet Thermal Oxide
**1 Lot = 25 wafers
775.00 775.0 USD
Sale
PRD1001 - 1000A Wet Thermal Oxide on 100mm wafers
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1 - 20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 1000A +/- 5% Wet Thermal Oxide
700.00 700.0 USD
Sale
PRD1005 - 3000A Wet Thermal Oxide on 100mm Wafers
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: .003 - .005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Wet Thermal Oxide
775.00 775.0 USD
Sale
PRD1008 - 40,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 40,000A +/- 5% Wet Thermal Oxide
950.00 950.0 USD
Sale
PRD1009 - 80,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 80,000A +/- 5% Wet Thermal Oxide
4,306.25 4306.25 USD
Sale
PRD1010 - 20,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 20,000A +/- 5% Wet Thermal Oxide
750.00 750.0 USD
Sale
PRD1011 - 10,000A Wet Thermal Oxide on 100mm Wafer
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 10,000A +/- 5% Wet Thermal Oxide
700.00 700.0 USD