Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes.  Using Dry Chlorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions.  The addition of a Forming Gas Anneal after oxidation is to passivate dangling bonds.  Dangling bonds at the silicon interface can have an effect on the insulating properties of your oxide.

Note:

1. All prices include the pre-process clean. 

2. Please note that we  invoice in Batches of 25 wafers. For example, if 35 wafers are processed the invoice will still equal the amount for 50 wafers.

3. Float Zone Wafers (FZ) can be run separate from non-FZ wafers for an additional US$100.00 (up to 25 wafers). For orders greater than 50 wafers this fee is waived.

4. Typical WTWNU and WIWNU is +/- 5%

5. Non-Semi Standard Thickness Wafers  must be quoted each order.

6. Single Sided Processing  is available, must be quoted for each order.
   

Dry Chlorinated Thermal Oxidation Parameters
Thickness	100Å - 3,000Å
Thickness Tolerance	100Å - 499Å +/-30%; 500Å + 999 +/-10%; ≥1,000Å +/-5%
Sides Processed	Both
Film Stress	-320MPa +/-50MPa (Compressive)
Wafer Thickness	Semi - Std.  Thickness
Wafer Material	Silicon
Gases	Oxygen
Chemical Vapor	TransLC (Chlorine Source)
Equipment	Horizontal Furnace

Forming Gas Anneal Parameters
Sides Processed	Both
Wafer Thickness	Semi - Std. Thickness
Wafer Material	Silicon
Temperature	~450C
Process Time	~1 hour
Gases	Hydrogen 4%/ Nitrogen 96%
Equipment	Horizontal Furnace

Wafer Size
50.8mm, 76.2mm, 100mm 

Wafer Size
125mm, 150mm

Wafer Size
200mm